Field-effect transistors

Details Field-effect transistors Field-effect transistors

1976-10-15

1977-12-27

Wojciechowicz, Edward J.

357 22, 357 55, 357 68, H01L 2980, H01L 2978, H01L 2906, H01L 2348

Patent

active

040657825

ABSTRACT:
A field-effect transistor (FET) for use at microwave frequencies has electrodes which act as transmission lines. Gate electrodes can comprise a narrow operative part between the source and drain electrodes which provides gating action, and a gate supply part which lies outside the source and drain electrodes and is connected to the operative part by a plurality of connections distributed along its length. In one form the device can be used as an amplifier and as such is capable of providing higher power handling capacity than conventional FETs, since the device can be extended in size and phase differences between various parts of the device compensate for one another. Other forms and applications are disclosed as a modulator and as a convoluter.

REFERENCES:
patent: 3813586 (1974-05-01), Conner
patent: 3969745 (1976-07-01), Blocker

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