Field effect transistors

Details Field effect transistors Field effect transistors

1976-05-14

1978-08-08

Wojciechowicz, Edward J.

357 4, 357 89, H01L 2978

Patent

active

041060458

ABSTRACT:
A field effect transistor includes a thin silicon layer formed on a sapphire substrate and having source, gate and drain regions. A buried layer of the same conductivity type as that of the gate region and a higher impurity concentration than that of the gate region at the lower portion of a junction between the source and gate regions.

REFERENCES:
patent: 3890632 (1975-06-01), Ham et al.
patent: 3958266 (1976-05-01), Athanas
IBM Tech. Bul., vol. 18, No. 10, Mar. 1976, Abbas et al.

Affiliated with

Also associated with

Rating

Field effect transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-922610