Miscellaneous active electrical nonlinear devices – circuits – and – Gating
Patent
1993-09-20
1995-07-04
Sikes, William L.
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
327566, 327 38, H01L 2500, H03K 908
Patent
active
054304032
ABSTRACT:
To avoid forward biasing the diodes within an N-channel transistor, the body and source of the N-channel transistor are switchably connected via a high-voltage FET. The gates of the N-channel transistor and high-voltage transistor are connected together so that both transistors are on or off simultaneously. When both transistors are on, the high-voltage transistor shorts the body and source of the N-channel transistor. When both transistors are off, the body and source of the N-channel transistor are disconnected and a third transistor couples the body to a reference potential. The N-channel transistor and high voltage transistor share a common body in a semiconductor substrate. The source of the N-channel transistor provides an output terminal for the circuit. A number of these devices, each connected to a different supply voltage, can be connected to the same output terminal and selectively energized to form a voltage multiplexer.
REFERENCES:
patent: 4675561 (1987-06-01), Bowers
patent: 4700125 (1987-10-01), Takata
patent: 4924111 (1990-05-01), Anderson
patent: 5296723 (1994-03-01), Nobe
patent: 5317180 (1994-05-01), Hutter
Bittner Harry J.
Moyer James C.
Micrel Inc.
Nguyen Tiep
Ogonowsky Brian D.
Sikes William L.
LandOfFree
Field effect transistor with switchable body to source connectio does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field effect transistor with switchable body to source connectio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor with switchable body to source connectio will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-763111