Field effect transistor with switchable body to source connectio

Miscellaneous active electrical nonlinear devices – circuits – and – Gating

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Details

327566, 327 38, H01L 2500, H03K 908

Patent

active

054304032

ABSTRACT:
To avoid forward biasing the diodes within an N-channel transistor, the body and source of the N-channel transistor are switchably connected via a high-voltage FET. The gates of the N-channel transistor and high-voltage transistor are connected together so that both transistors are on or off simultaneously. When both transistors are on, the high-voltage transistor shorts the body and source of the N-channel transistor. When both transistors are off, the body and source of the N-channel transistor are disconnected and a third transistor couples the body to a reference potential. The N-channel transistor and high voltage transistor share a common body in a semiconductor substrate. The source of the N-channel transistor provides an output terminal for the circuit. A number of these devices, each connected to a different supply voltage, can be connected to the same output terminal and selectively energized to form a voltage multiplexer.

REFERENCES:
patent: 4675561 (1987-06-01), Bowers
patent: 4700125 (1987-10-01), Takata
patent: 4924111 (1990-05-01), Anderson
patent: 5296723 (1994-03-01), Nobe
patent: 5317180 (1994-05-01), Hutter

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