Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1998-09-10
1999-09-07
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, 257279, 257280, H01L 310328, H01L 2980
Patent
active
059490969
ABSTRACT:
In a field effect transistor, a semiconductor channel layer is formed for carriers to run therein, and a first conductive semiconductor carrier supply layer is formed on the channel layer. Also, a second conductive semiconductor layer has a conductive type opposite to the carrier supply layer or contacts the gate electrode and is formed of same materials as the carrier supply layer. A third conductive semiconductor layer is formed on the layer having a conductive type opposite to the carrier supply layer or contacting the gate electrode and has the same conductive type of the carrier supply layer. A schottky gate electrode is formed in contact with the second conductive semiconductor layer.
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patent: 5789771 (1998-08-01), Liu et al.
Blum et al., AlxGa1-xAs device arrays, IBM technical disclosure bulletin, vol. 15, No. 2, pp. 443-444, Jul. 1972.
Kunihiro Kazuaki
Ohkubo Satoru
Ohno Yasuo
Nadav Ori
NEC Corporation
Thomas Tom
LandOfFree
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