Field effect transistor with short channel length and process of

Details Field effect transistor with short channel length and process of Field effect transistor with short channel length and process of

1988-06-17

1989-10-24

James, Andrew J.

357 40, 357 231, H01L 2978

Patent

active

048765813

ABSTRACT:
For preventing a field effect transistor from the short-channel effects, there is disclosed a field effect transistor comprising a channel region and source/drain regions deviating from the central portion of the channel region in the lateral direction of the field effect transistor, a gate electrode covered with an insulating film intervenes between the source/drain regions, so that the channel length is increased in length.

REFERENCES:
patent: 4660062 (1987-04-01), Nishizawa

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