Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1995-10-13
1997-11-11
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, H01L 310328, H01L 310336
Patent
active
056867409
ABSTRACT:
In an FET structure, an n-type AlGaAs electron supplying layer is provided above a GaAs channel layer, and a low-resistivity n-type GaAs contact layer (the first semiconductor layer) is provided between the source/drain electrode and the electron supplying layer. A high-resistivity AlGaAs layer (the second semiconductor layer) is formed on the sidewalls of the contact layer and the immediately adjacent region between the gate electrode and the contact layer. According to the present invention, since a semiconductor film is used as the thin film formed on the sidewall and the adjacent electron supplying layer instead of a conventional insulating film, and moreover since AlGaAs is substantially lattice matched to GaAs and has a larger band width, parasitic resistance is reduced significantly, and the fluctuation of device performance properties is prevented while still maintaining high breakdown voltage. A semiconductor layer having a conduction type opposite that of the contact layer may also be used in place of the high resistivity AlGaAs layer.
REFERENCES:
patent: 4593301 (1986-06-01), Inata et al.
patent: 5181087 (1993-01-01), Usagawa et al.
Fahmy Wael
NEC Corporation
LandOfFree
Field effect transistor with recessed gate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field effect transistor with recessed gate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor with recessed gate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1231361