Field effect transistor with non-linear transfer characteristic

Details Field effect transistor with non-linear transfer characteristic Field effect transistor with non-linear transfer characteristic

1992-06-08

1995-05-02

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 20, H01L 29161, H01L 29205, H01L 29225

Patent

active

054122244

ABSTRACT:
A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by barrier layers comprising wide bandgap material (18) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is coupled a N-type drain region (22b). Each channel is also coupled to an N-type source region (25b). With appropriate gate bias on a gate electrode (17), quantized energy levels in the channels (12, 14, 16) are aligned to provide self-doping by electrons in the valence band of the P-channel (14) moving to the conduction band of the N-channels (12, 16) providing peak channel conductivity. At higher gate bias, one of the N-channels (12) becomes non-conductive creating a negative resistance region.

REFERENCES:
patent: 4195305 (1980-03-01), Moon
patent: 4207122 (1980-06-01), Goodman
patent: 4793951 (1988-05-01), Chang et al.
patent: 4806993 (1989-02-01), Voisin et al.
Sercel et al, `Type two broken gap quantum wires . . . `, App Phys lttr, 57(15), pp. 1569-1571, 8 Oct. 90.
Beresford et al, `Interband tunneling . . . heterostructures`, Appl Phys Lttr 56(10), pp. 952-954, 5 Mar. 90.
Zhu et al, `Exitonic Insulator Transition . . . `, Solid State Comm, vol. 75 No. 7, pp. 595-599, 1990.

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