Field effect transistor with multiple grooves

Details Field effect transistor with multiple grooves Field effect transistor with multiple grooves

1989-06-19

1991-01-08

Mintel, William

357 15, 357 55, H01L 2980

Patent

active

049840363

ABSTRACT:
A field effect transistor has an active layer containing a multi-step recess that becomes narrower as it approaches the substrate. A gate electrode is produced at the deepest portion of the recess section. The transistor may be produced by successively selectively etching the active layer and an overlying semiconductor surface protection film to produce a multi-step configuration recess, depositing a gate electrode at the bottom of the recess, and depositing source and drain electrodes on the active layer.

REFERENCES:
patent: 4425573 (1984-01-01), Ristow
patent: 4517730 (1985-05-01), Meignant
patent: 4519127 (1985-05-01), Arai
patent: 4600932 (1986-07-01), Norris
patent: 4818724 (1989-04-01), Cetronio et al.
Furutsuka et al., "Improvement of the Drain . . . Recess Structure", IEEE Transactions on Electron Devices, vol. ED-25, No. 6, Jun. 1978, pp. 563-567.
Yamamoto et al., "Light Emission and Burnout . . . MESFET's", IEEE Transactions on Electron Devices, vol. ED-25, No. 6, Jun. 1978, pp. 567-573.

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