Field effect transistor with landing pad

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 41, 437200, H01L 2144

Patent

active

054078598

ABSTRACT:
A field effect transistor is fabricated with a window pad layer that is patterned using a patterned dielectric with sublithographic spacing as an etch mask. Desirable attributes of the transistor include small junction capacitance.

REFERENCES:
patent: 4683645 (1987-08-01), Naguib et al.
patent: 4844776 (1987-12-01), Lee et al.
patent: 4922311 (1989-04-01), Lee et al.
patent: 5206187 (1993-04-01), Doan et al.
patent: 5234851 (1993-08-01), Korman et al.
patent: 5254490 (1993-10-01), Kondo
patent: 5340761 (1994-08-01), Loh et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Field effect transistor with landing pad does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor with landing pad, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor with landing pad will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-66798

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.