Field effect transistor with landing pad

Details Field effect transistor with landing pad Field effect transistor with landing pad

1993-12-01

1995-04-18

Fourson, George

Fishing, trapping, and vermin destroying

437 41, 437200, H01L 2144

Patent

active

054078598

ABSTRACT:
A field effect transistor is fabricated with a window pad layer that is patterned using a patterned dielectric with sublithographic spacing as an etch mask. Desirable attributes of the transistor include small junction capacitance.

REFERENCES:
patent: 4683645 (1987-08-01), Naguib et al.
patent: 4844776 (1987-12-01), Lee et al.
patent: 4922311 (1989-04-01), Lee et al.
patent: 5206187 (1993-04-01), Doan et al.
patent: 5234851 (1993-08-01), Korman et al.
patent: 5254490 (1993-10-01), Kondo
patent: 5340761 (1994-08-01), Loh et al.

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