Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor
Patent
1994-02-28
1996-06-11
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
To compound semiconductor
257280, 257281, 257486, H01L 2980, H01L 27095, H01L 2947
Patent
active
055258298
ABSTRACT:
A MOSFET device is constructed with an integrated Schottky diode clamp connected between the source or drain terminal and the bulk terminal. In an illustrative implementation, one or more MOSFETs are formed in an n-well located in a p-type silicon substrate. Each drain is formed by a p+ region underlying a portion of a metal-silicide layer. In one embodiment, the p+ region underlies an edge of the metal-silicide; in another embodiment, the p+ region underlies opposing edges of the metal-silicide, such that a portion of the metal-silicide contacts the n-well. Each source is formed by a p+ region underlying a layer of metal-silicide. Each gate includes a layer of p+ or n+ polycrystalline silicon clad with a layer of metal-silicide, the gates being separated from the n-well by a layer of oxide. In comparison to p-n junction diodes, the integrated Schottky diodes more effectively limit excess voltages applied to MOSFETs. The clamping performed by the invention reduces wearout and other deleterious effects of excess voltage.
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Casey Mark J.
Crane Sara W.
Digital Equipment Corporation
Fisher Arthur W.
Maloney Denis G.
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