Field effect transistor with insulated gate electrode

Details Field effect transistor with insulated gate electrode Field effect transistor with insulated gate electrode

1979-01-16

1980-11-11

Clawson, Jr., Joseph E.

357 13, 357 55, H01L 2978

Patent

active

042336171

ABSTRACT:
A field effect transistor of the V-MOST type in which the channel region comprises a more highly doped part which adjoins the source zone and a lower doped part which surrounds said region, said channel region adjoining the surface and surrounded by an insulation diffusion. The lower-doped part is depleted from the pn junction with the low-doped drain region up to the surface at a voltage which is lower than the breakdown voltage.

REFERENCES:
patent: 4084175 (1978-04-01), Ouyanh
patent: 4105475 (1978-08-01), Jenne
patent: 4109270 (1978-08-01), Von Basse et al.
patent: 4126881 (1978-11-01), Von Basse et al.
patent: 4145703 (1979-03-01), Blanchard et al.

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