Field effect transistor with high cut-off frequency and process

Details Field effect transistor with high cut-off frequency and process Field effect transistor with high cut-off frequency and process

1982-03-01

1984-09-11

Edlow, Martin H.

357 232, 357 237, 357 2315, 357 61, H01L 29161

Patent

active

044713665

ABSTRACT:
There is disclosed a heterojunction field effect transistor with an accumulation of majority carriers functioning as a high cut-off frequency device in which the transistor uses the properties of the same type GaAs/Al.sub.x Ga.sub.1-x As N-doped junctions with the GaAs being weakly doped. This is used to produce a high mobility of charges in the accumulation layer and is effected by a structure in which the source and drain regions are partially covered by the gate region which is in turn covered by an insulation layer and thereby reduces the access resistances and increases the transition frequencies.

REFERENCES:
patent: 4160261 (1979-07-01), Casey, Jr.

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