Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1995-02-07
1996-07-23
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257282, 257284, 257275, 257286, H01L 2980, H01L 31112
Patent
active
055392288
ABSTRACT:
A monolithic-microwave-integrated-circuit (MMIC) metal-semiconductor-field-effect (MESFET) transistor (40) or other type of field-effect transistor has a double-recessed channel region (32,42) with a gate recess (42) formed in a channel recess (32). The channel recess (32) is offset toward the drain (16) as far as possible without shorting the channel recess (32) to the drain (16) to increase the transistor breakdown voltage. The gate recess (42) is offset toward the source (14) as far as possible without causing the gate-source capacitance to increase, thereby reducing the transistor source resistance.
REFERENCES:
patent: 4135168 (1979-01-01), Wade
patent: 4972237 (1990-11-01), Kawai
"Gallium Arsenide Processing Techniques", by R. Wiliams, Artech House, 1984, pp. 61-71.
"A 2.5 Watt X-Band High Efficiency MMIC Amplifier", by V. Hwang et al., IEEE 1990 Microwave and Millimeter-Wave Monolithic Circuits Sym, pp. 39-41.
"Surface Potential Effect On Gate-Drain Avalanche Breakdown In GaAs MESFET'S", by H. Mizuta, IEEE, vol. ED-34, No. 10, Oct. 1987, pp. 2027-2033.
Denson-Low W. K.
Hughes Aircraft Company
Lachman M. E.
Ngo Ngan V.
Sales M. W.
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