Field effect transistor with gate and drain electrodes on the si

Details Field effect transistor with gate and drain electrodes on the si Field effect transistor with gate and drain electrodes on the si

1975-06-06

1980-07-08

Munson, Gene M.

357 56, 357 15, H01L 2980, H01L 2964, H01L 2906

Patent

active

042120225

ABSTRACT:
A semiconductor device including a semiconductor body having at least one ohmic electrode and at least one blocking electrode, wherein an ohmic electrode or a blocking electrode is disposed on the side surface of the semiconductor body and wherein in the case where an ohmic electrode is disposed on the side surface, the ohmic electrode has adjacent to it a blocking electrode which is on a major surface of the semiconductor body and, in the case where a blocking electrode is disposed on the side surface, the blocking electrode has adjacent to it an ohmic electrode which is on the major surface.

REFERENCES:
patent: 3114867 (1963-12-01), Szekely
patent: 3609477 (1971-09-01), Drangeid et al.
patent: 3761785 (1973-09-01), Pruniaux
patent: 3906541 (1975-09-01), Goronkin
patent: 3920861 (1975-11-01), Dean
Statz "Fabricating Field Effect Transistors" IBM Tech. Disclosure Bulletin vol. 11, (9/68) p. 397.
DeWitt "Field Effect Transistor" IBM Tech. Disclosure Bulletin vol. 9, (6/66) p. 102.
Tuyl et al., "High-Speed Integrated Logic with GaAs Mesfets" IEEE J. Solid-State Circuits vol. 50-9, (10/74) pp. 269-276.
Zuleeg et al., "A Thin-Film Space-Charge Limited Triode" Proc. IEEE (9/66) pp. 1197-1198.
Drangeid "High-Speed Field-Effect Structure" IBM Technical Disclosure Bulletin vol. 11, (8/68) pp. 332-333.

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