Field effect transistor with enhanced insulator structure

Details Field effect transistor with enhanced insulator structure Field effect transistor with enhanced insulator structure

2007-10-09

2007-10-09

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

C257S012000, C257S020000, C257S024000, C257S027000, C257S189000, C257S190000, C257S194000, C257S195000

Reexamination Certificate

active

11004187

ABSTRACT:
A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the interface of the III-nitride materials permits high current conduction with low ON resistance, and is controllable through the manipulation of spontaneous polarization fields obtained according to the characteristics of the III-nitride material. The field effect transistor produced can be made to be a nominally on device where the in-plane lattice constants of the material forming the interface match. A nominally off device may be produced where one of the material layers has an in-plane lattice constant that is larger than that of the other layer material. The layer materials are preferably InAlGaN/GaN layers that are particularly tailored to the characteristics of the present invention.

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Office Action issued May 17, 2007 from the Taiwanese Patent Office in corresponding Taiwanese Application No. 93137383.

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