Field effect transistor with crystallized channel region

Details Field effect transistor with crystallized channel region Field effect transistor with crystallized channel region

1994-02-14

1994-11-15

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 67, 257 69, 257 70, H01L 2978

Patent

active

053650808

ABSTRACT:
A semiconductor device which is excellent in reliability and electrical characteristics. The semiconductor device is formed on an insulating substrate. A channel region is formed between a source and a drain by the voltage applied to a gate electrode. The channel region, the source, and the drain are fabricated from a semiconductor having a large mobility. The other regions including the portion located under the channel region are fabricated from a semiconductor having a small mobility.

REFERENCES:
patent: 4514895 (1985-05-01), Nishimura
patent: 4768076 (1988-08-01), Aoki et al.
patent: 4799097 (1989-01-01), Szluk et al.
patent: 4916504 (1990-04-01), Nakahara
patent: 4918510 (1990-04-01), Pfiester

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