Field-effect transistor with at least two different semiconducti

Details Field-effect transistor with at least two different semiconducti Field-effect transistor with at least two different semiconducti

1993-07-30

1996-03-19

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

257 20, 257 24, 257191, 257192, H01L 3524, H01L 5100

Patent

active

055005373

ABSTRACT:
A field effect transistor has a channel between a source electrode and a drain electrode made from an organic semiconductor. In one form of the invention, the channel is a mixture of at least two different organic compounds. In another form of the invention, the channel is a lamination of at least two films of different organic compounds. The channel can also be a .pi.-conjugated block copolymer of at least two different types of monomers.

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patent: 4994204 (1991-02-01), Doane et al.
"Polythiophene Field-Effect Transistor: Its Characteristics and Operation Mechanism" by A. Tsumura, et al--Synthetic Metals, 25 (1988) pp. 11-23.
"A Well-Behaved Field Effect Transistor Based On An Intrinsic Molecular Semiconductor" by R. Madru, et al--Chemical Physics Letters, vol. 145, No. 4, Apr. 8, 1988, pp. 343-346.
"Field-Effect Transistor Utilizing Conducting Polymers" by H. Koezuka, et al Synthetic Metals, 28 (1989) pp. C753-C-760.

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