Field effect-transistor with asymmetrical structure

Details Field effect-transistor with asymmetrical structure Field effect-transistor with asymmetrical structure

1989-06-09

1991-11-05

Maples, John S.

Fishing, trapping, and vermin destroying

437 44, H01L 2265

Patent

active

H00009865

ABSTRACT:
A field effect transistor of asymmetrical structure comprises: a semiconductor substrate of first conductivity type; source and drain regions of second conductivity type disposed in a surface of the substrate and spaced apart by a channel region; and a single, lightly doped extension of the drain region into the channel, the extension being of the second conductivity type and of a lower dopant concentration than the drain region. The transistor can further beneficially comprise a halo region of the first conductivity type in the substrate generally surrounding only the source region.

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