Field effect transistor with amorphous oxide active layer...

Details Field effect transistor with amorphous oxide active layer... Field effect transistor with amorphous oxide active layer...

2005-11-09

2009-10-13

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S052000, C257S065000, C257SE31034, C438S149000, C438S166000

Reexamination Certificate

active

07601984

ABSTRACT:
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

REFERENCES:
patent: 5625199 (1997-04-01), Baumbach et al.
patent: 5656844 (1997-08-01), Klein et al.
patent: 5960268 (1999-09-01), Aihara
patent: 6429456 (2002-08-01), Takechi et al.
patent: 6445033 (2002-09-01), Hasegawa
patent: 6567145 (2003-05-01), Kaneko et al.
patent: 7189992 (2007-03-01), Wager et al.
patent: 7297977 (2007-11-01), Hoffman et al.
patent: 7309895 (2007-12-01), Hoffman et al.
patent: 2002/0096717 (2002-07-01), Chu et al.
patent: 2002/0115242 (2002-08-01), Joo et al.
patent: 2002/0137267 (2002-09-01), Joo et al.
patent: 2002/0153527 (2002-10-01), Chang et al.
patent: 2002/0167981 (2002-11-01), Eisenbeiser
patent: 2003/0013319 (2003-01-01), Holmes et al.
patent: 2003/0015756 (2003-01-01), Farber et al.
patent: 2003/0017683 (2003-01-01), Emrick et al.
patent: 2003/0184688 (2003-10-01), Kim
patent: 2003/0218222 (2003-11-01), Wager, III et al.
patent: 2004/0127038 (2004-07-01), Carcia et al.
patent: 2004/0155270 (2004-08-01), Hoffman
patent: 2006/0113549 (2006-06-01), Den et al.
patent: 2007/0090365 (2007-04-01), Hayashi et al.
patent: 2007/0194379 (2007-08-01), Hosono et al.
patent: 1313134 (2003-05-01), None
patent: 1443130 (2004-08-01), None
patent: 05-251705 (1993-09-01), None
patent: 2000-44236 (2000-02-01), None
patent: 2002-076356 (2002-03-01), None
patent: 2002-289859 (2002-10-01), None
patent: 2003-298062 (2003-10-01), None
patent: 2004-103957 (2004-04-01), None
patent: 2004-0093543 (2004-11-01), None
patent: WO 03/098699 (2003-11-01), None
patent: WO 2005/074038 (2005-08-01), None
patent: WO 2005/188726 (2005-09-01), None
patent: WO 2005/093846 (2005-10-01), None
patent: WO 2005/093847 (2005-10-01), None
patent: WO 2005/093848 (2005-10-01), None
patent: WO 2005/093849 (2005-10-01), None
patent: WO 2005/093850 (2005-10-01), None
patent: WO 2005/093851 (2005-10-01), None
patent: WO 2005/093852 (2005-10-01), None
“Carrier Transport in Transparent Amorphous Oxide Semiconductor InGaZnO4”, Nomura et al.; Preprint 31a-ZA-6 of 51th Meeting of Union of applied Phys. Soc. , Mar. 2004, Tokyo University of Technology.
“Room Temperature Fabrication and Carrier Transport . . . (>10 cm2/Vs)”, Kamiya et al. ; Preprint 1a-F-5 of 65thMeeting of Appl. Phys. Soc., Sep. 2004, Tohoku Gakuen University.
Patent Abstracts of Japan, vol. 2000, No. 5, Sep. 2000 for JP2000-44236.
Patent Abstracts of Japan, vol. 2002, No. 7, Jul. 2002 for JP 2002-076356.
J.R. Billingham, et al.,: “Electrical and optical properties of amorphous indium oxide” AJ. Phys.: Condens. Matter, vol. 2, 1990, pp. 6207-6221.
Pung Keun Song et al: “Preparation and Crystallization of Tin-Doped and Undoped Amorphous Indium Oxide Films Deposited by Sputtering” Japanese Journal of Applied Physics, Japan Society of Applied Physics, Tokyo, JP, vol. 38, No. 9A, Part 1, Sep. 1999, pp. 5224-5226.
Orita M et al: “Amorphous transparent conductive oxide InGAO3(ZnO)m(m<4): a Zn 4s conductor” Philosophical Magazine, Taylor and Francis, London, GB, vol. 81, No. 5, May 1, 2001, pp. 501-515.
Nomura K et al: “Electron transport in InFA03(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs” Preparation and Characterization, Elsevier Sequoia, NL, vol. 445, No. 2, Dec. 15, 2003, pp. 322-326.
Asakuma Naoko et al: “Photocrystallization of amorphous AnO” Journal of Applied Physics, American Institute of Physics. New York, US, vol. 92, No. 10, Nov. 15, 2002, pp. 5707-5710.

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