Field effect transistor with alpha particle protection

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357 16, 357 236, 357 41, H01L 2980

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active

051247704

ABSTRACT:
An FET structure with improved .alpha.-particle immunity or soft error immunity particularly provided in a semi-insulating substrate. This structure includes some layer which can prevent both electrons and holes generated in a substrate by the incidence of .alpha.-particles from being injected into the FET.

REFERENCES:
patent: 4247862 (1981-01-01), Klein
patent: 4424526 (1984-01-01), Dennard et al.
patent: 4605945 (1986-08-01), Katayama et al.
patent: 4673959 (1987-06-01), Shiraki et al.
patent: 4755857 (1988-07-01), Abstreiter et al.
patent: 4864382 (1989-09-01), Aoki et al.
H. Lee, "High Energy Particle Absorber in Dynamic Mem.," IBM Tech. Discl. Bull., vol. 22, #7, Dec. 1979, pp. 2689-2690.
H. Sakaki, "Vel.-Mod. Trans (VMT) . . . ," JAP. J.A.P., vol. 21, #6, Jun. 1982, pp. L381-L383.

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