Patent
1990-04-20
1992-06-23
Hille, Rolf
357 16, 357 236, 357 41, H01L 2980
Patent
active
051247704
ABSTRACT:
An FET structure with improved .alpha.-particle immunity or soft error immunity particularly provided in a semi-insulating substrate. This structure includes some layer which can prevent both electrons and holes generated in a substrate by the incidence of .alpha.-particles from being injected into the FET.
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H. Lee, "High Energy Particle Absorber in Dynamic Mem.," IBM Tech. Discl. Bull., vol. 22, #7, Dec. 1979, pp. 2689-2690.
H. Sakaki, "Vel.-Mod. Trans (VMT) . . . ," JAP. J.A.P., vol. 21, #6, Jun. 1982, pp. L381-L383.
Hashimoto Norikazu
Shigeta Junji
Ueyanagi Kiichi
Umemoto Yasunari
Hille Rolf
Hitachi , Ltd.
Loke Steven
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