Field effect transistor with active layer apart from guard-ring

Details Field effect transistor with active layer apart from guard-ring Field effect transistor with active layer apart from guard-ring

1988-03-16

1992-01-28

Hille, Rolf

357 41, 357 47, 357 52, H01L 2980

Patent

active

050847449

ABSTRACT:
In a field effect transistor (JFET) having a compound semiconducting substrate, a buffer layer having a guard-ring, an active layer, source regions, drain regions, and gate regions, the guard-ring is separated from the active layer whereby gate junction capacitance and gate leakage current are lowered without raising a gate resistance value. As a result, noise characteristics and high frequency characteristics can be improved.

REFERENCES:
patent: 4104672 (1978-08-01), DiLorenzo et al.
patent: 4424525 (1984-01-01), Mimura

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