Field effect transistor with acceleration dependent gain

Details Field effect transistor with acceleration dependent gain Field effect transistor with acceleration dependent gain

1990-10-18

1992-04-07

Hille, Rolf

Electrical generator or motor structure

Dynamoelectric

Rotary

357 26, 357 27, 310329, H01L 2966, H01L 2984, H01L 2722, H01L 4104

Patent

active

051032791

ABSTRACT:
A micro-mechanical sensor having a field effect transistor formed in a proof mass portion of a substrate is provided. The proof mass portion is attached to a support portion of the substrate by a means for flexing such as a diaphragm or cantilever beam. A gate electrode is formed over a channel region of the field effect transistor and separated from the channel region by a gap whereby force applied to the sensor causes the proof mass portion to move towards the gate electrode due to flexing of the flexing means. As the channel region moves closer to the gate electrode, current flows through the field effect transistor generating an output signal.

REFERENCES:
patent: 3440873 (1969-04-01), Eichelberger
patent: 3585466 (1971-06-01), Davis, Jr.
patent: 4378510 (1983-03-01), Bennett
patent: 4706374 (1987-11-01), Murakami
patent: 4873871 (1989-10-01), Bai et al.
patent: 4963954 (1990-10-01), Halg et al.
L. M. Roylance, "A Batch-Fabricated Silicon Acceterometer", IEEE Transactions on Electron Devices, vol. ED-26, No. 12; Dec. 1979.

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