Field effect transistor with a submicron vertical structure and

Details Field effect transistor with a submicron vertical structure and Field effect transistor with a submicron vertical structure and

1986-09-22

1987-10-06

Edlow, Martin H.

357 56, 357 2314, H01L 2980, H01L 2978, H01L 2906

Patent

active

046986545

ABSTRACT:
The invention relates to a vertical field effect transistor operating under ballistic conditions at very high frequencies (100-200 GHz). In order to increase the output impedance of this transistor, as well as its power, the field effect of the first gate is decoupled from the drain by the field effect of a second gate. The two gates are carried by two opposite sides of a mesa etched in the active layer beneath the drain. The second gate is displaced with respect to the first gate and is closer to the drain. The displacement is obtained by an insulating layer beneath the second gate. The two gates are successively deposited by lateral projections. Application to ultra-high frequency systems.

REFERENCES:
patent: 4129879 (1978-12-01), Tantraporn et al.
patent: 4160259 (1979-07-01), Nishizawa
patent: 4262296 (1981-04-01), Shealy

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