Field effect transistor with a high cut-off frequency

Details Field effect transistor with a high cut-off frequency Field effect transistor with a high cut-off frequency

1983-06-09

1984-06-19

Wojciechowicz, Edward J.

357 15, 357 16, 357 61, H01L 2980

Patent

active

044555644

ABSTRACT:
The invention relates to semiconductor devices of the transistor type operating at high frequencies.
In order to make the drain/source current characteristic linear with the voltage applied to the grid and in order to retain a construction technology which is compatible with existing technologies the invention provides an Al.sub.x Ga.sub.1-x As layer between the substrate and the active GaAs layer. A supplementary, highly doped, GaAs layer and a supplementary semi-insulating Al.sub.x Ga.sub.1-x As layer modify the source and drain access resistances and the output resistance.
Application to devices operating at ultra-high frequencies.

REFERENCES:
patent: 4157556 (1979-06-01), Decker et al.

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