Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1995-09-14
1999-05-11
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257280, H01L31/312;29/80
Patent
active
059030151
ABSTRACT:
A field effect transistor in accordance with the present invention comprises a buffer layer made of a highly resistant diamond on a substrate; an active layer which is made of a conductive diamond on the buffer layer and has such a dopant concentration that conduction of carriers is metallically dominated thereby and such a thickness that dopant distribution is two-dimensionally aligned thereby; a cap layer made of a highly resistant diamond on the active layer; a gate electrode layer formed on the cap layer so as to make Schottky contact therewith; and a source electrode layer and a drain electrode layer which make ohmic contact with a laminate structure of said buffer, active and cap layers. Namely, the active layer is formed as a so-called .delta.-dope layer or pulse-dope layer doped with a conductive dopant, while being held between both highly resistant buffer and cap layers. Accordingly, even when the dopant concentration in the conductive diamond layer is increased, a high gain, as an excellent controllability and an excellent temperature-stability in operation characteristics can be obtained.
REFERENCES:
patent: 5300188 (1994-04-01), Tessmer et al.
patent: 5523588 (1996-06-01), Nishimura et al.
Shiomi et al; "Pulse doped P-Channel Metal Semiconductor FET"; pp. 36-38, Jan. 16, 1995.
"Characterization of Boron-Doped Diamond Epitaxial Films and Applications for High-Voltage Schottky Diodes and Mesfet", Shiomi et al., from the Proceedings of the Second International Conference on New Diamond Science and Technology, Sep. 23-27, 1990, Washington, DC.
"High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films", Shiomi et al., Japanese Journal of Applied Physics, vol. 29, No. 12, Dec. 1990, pp. L2163-L2164.
Shiomi et al., "Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial Film", Japanese Journal of Applied Physics, vol. 28 No. 5 (May 1989) pp. 758-762.
Fujimori et al., "Diamond Devices Made of Epitaxial Diamond Films", Diamond and Related Materials, vol. 1 No. 5/6 (Apr. 15, 1992) pp. 665-668.
Shiomi et al., "Pulse-Doped Diamond p-Channel Metal Semiconductor Field-Effect Transistor", IEEE Electron Device Letters, vol. 16 No. 1 (Jan. 16, 1995) pp. 36-38.
Nishibayashi Yoshiki
Shikata Shin-ichi
Shiomi Hiromu
Fahmy Wael
Sumitomo Electric Industries Ltd.
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