Field effect transistor using compound semiconductor

Details Field effect transistor using compound semiconductor Field effect transistor using compound semiconductor

1993-05-20

1994-12-20

Loke, Steven Ho Yun

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257280, 257282, 257283, H01L 2980, H01L 31112

Patent

active

053748352

ABSTRACT:
A compound semiconductor device such as HEMTs (High Electron Mobility Transistors), metal semiconductor field effect transistors, and the like includes a compound semiconductor substrate having an active region, an insulating film provided over the semiconductor substrate, source and drain electrodes provided on the active region, and a gate electrode located between the source and drain electrodes. In the structure, the gate electrode has a lower electrode portion for providing a Schottky barrier contact with the active region through an opening of the insulating film, and an upper electrode portion provided on the insulating film to extend toward only the drain electrode.

REFERENCES:
patent: 4673960 (1987-06-01), Chao et al.
"0.25-0.1 .mu.m T-shaped gate electrode fabrication by using electron beam direct drawing", Nishida et al., Data of A Research Meeting of Electronics, Information and Communication Engineers of Japan, ED90-92, pp. 37-43, 1990.

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