Field effect transistor using amorphous oxide film as...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

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C257S052000, C257S055000, C257S057000, C257S072000, C257S079000, C257S098000, C257SE21441, C257SE21460, C257SE21461, C257SE29145, C257SE29273, C257SE29299

Reexamination Certificate

active

07956361

ABSTRACT:
An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled.

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