Field effect transistor type sensor with an auxiliary electrode

Details Field effect transistor type sensor with an auxiliary electrode Field effect transistor type sensor with an auxiliary electrode

1987-12-03

1989-07-18

James, Andrew J.

357 25, 357 2314, 357 53, 357 51, H01L 2978

Patent

active

048497983

ABSTRACT:
A field effect transistor-type sensor comprising a field effect transistor device incorporated with a sensitive means exhibiting electric variation due to a physical or chemical interaction with the physical quantity to be detected so that said sensitive means is disposed between a gate insulating film and a gate electrode of the transistor device, wherein an auxiliary electrode film for the application of a drift-cancellation voltage to said sensitive means is located between said gate insulating film and said sensitive means in such a manner that an extended portion of said auxiliary electrode film falls in a region over at least one part of a drain region of said transistor device.

REFERENCES:
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patent: 4397714 (1983-08-01), Janata et al.
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patent: 4489340 (1984-12-01), Ueda et al.
patent: 4514263 (1985-04-01), Jawata
patent: 4570328 (1986-02-01), Price et al.

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