Field effect transistor type semiconductor sensor and method of

Details Field effect transistor type semiconductor sensor and method of Field effect transistor type semiconductor sensor and method of

1986-02-20

1988-12-13

James, Andrew J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

Frequency of cyclic current or voltage

357 55, 324 715, H01L 2966

Patent

active

047914653

ABSTRACT:
In a semiconductor sensor, the surfaces of first and second semiconductor substractes of a first conductivity type are made into flat surfaces by polishing the surfaces and are contacted each other so that the both substrates are bonded together. Source and claim regions are formed by diffusing an impurity of second conductivity type. The source and claim regions are separated through a through hole formed in the second substrate and are extended along the surface of the second substrate. An insulative layer is formed on the opposite surface of the second substrate and an inner surface of the through hole.

REFERENCES:
patent: 4400869 (1983-08-01), Wilner
patent: 4671846 (1987-06-01), Shimbo

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