Field-effect transistor-type semiconductor sensor

Details Field-effect transistor-type semiconductor sensor Field-effect transistor-type semiconductor sensor

1989-03-23

1990-10-09

Kaplan, G. L.

Chemistry: electrical and wave energy

Apparatus

Electrolytic

204408, 204412, 204415, 204416, 357 25, 435291, 435817, G01N 2730, G01N 27327

Patent

active

049618334

ABSTRACT:
A field-effect transistor-type semiconductor sensor is provided which comprises first and second semiconductor substrates bonded strongly to each other interposing a silicon oxide film therebetween by the use of a direct-bonding technique. The first semiconductor substrate is formed into an island-shape, and incorporates a source region, a drain region and a gate region. The island-shaped substrate constitutes an ion-sensitive portion, and is immersed in a solution when in use. The second semiconductor substrate has openings in which source and drain electrodes are formed.

REFERENCES:
patent: 4020830 (1977-05-01), Johnson et al.
patent: 4505799 (1985-03-01), Baxter
patent: 4791465 (1988-12-01), Sakai et al.
Proc. 4th Int. Conf. Solid State Sensors and Actuators, pp. 726-729; H. H. van den Vlekkert et al, "A pH-ISFET and an Integrated pH-Pressure Sensor With Back-Side Contacts"(1987).

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