Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-12-13
1993-03-23
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257188, 257257, 257453, 257193, H01L 2714
Patent
active
051967170
ABSTRACT:
A field effect type photo-detector comprises a semiconductor buffer layer arranged on a substrate. A semiconductor activation layer is arranged on that buffer layer, and a source electrode, a drain electrode and a gate electrode are arranged on the activation layer. A depletion layer for controlling a current flow between the source electrode and the drain electrode is created in the activation layer by applying a voltage to the gate electrode. When light irradiates the activation layer, the depletion layer changes. The buffer layer has a wider band gap than that of the activation layer and has an energy gap which serves as a barrier to carriers. The buffer layer has a sufficiently wide band gap to prevent the absorption of light having an equal wavelength to that of the light irradiated to the activation layer.
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Chen et al., "Ultrahigh Speed Modulation-Doped Heterostructure Field-Effect Photodetectors", Applied Physics Letters, vol. 42, No. 12, pp. 1040-1042.
Liou, J. et al., "Slow Relaxation and Electric Field Quenching of Persistent conductivity in GaAs Metal-Semiconductor Field-Effect Transistors with Different Buffer Layer Structures", Applied Physics Letters, vol. 51, No. 24, Dec. 14, 1987, New York, NY, pp. 2010-2012.
Chang, C, et al., "Negative Photoconductivity in High Electron Mobility Transistors," Applied Physics Letters, vol. 51, No. 26, Dec. 28, 1987, pp. 2233-2235 New York, NY.
Umeda et al., "Effect of Incident Light Illumination Shape on Responsivity of GaAs MESFET Photodetector", Japanese Journal of Applied Physics, vol. 24, No. 5, Part 2, May 1985, pp. L367-L369 Tokyo, JP.
Hiroki Tamayo
Nojiri Hidetoshi
Canon Kabushiki Kaisha
Mintel William
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