Field-effect transistor substantially consisting of organic...

Details Field-effect transistor substantially consisting of organic... Field-effect transistor substantially consisting of organic...

2002-06-05

2008-07-22

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C438S099000, C257SE39007

Reexamination Certificate

active

07402834

ABSTRACT:
An organic field-effect transistor is disclosed in which an insulating layer having a thickness of 0.3 m or less is provided on a substantially planar electrode layer. This transistor has a channel length down to 2 m, satisfying the condition for voltage amplification well below 10V, and has an on/off ratio of about 25.

REFERENCES:
patent: 5347144 (1994-09-01), Garnier et al.
patent: 5500537 (1996-03-01), Tsumura et al.
patent: 5596208 (1997-01-01), Dodabalapur et al.
patent: 5705826 (1998-01-01), Aratani et al.

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