Field-effect transistor structures with gate electrodes with...

Details Field-effect transistor structures with gate electrodes with... Field-effect transistor structures with gate electrodes with...

2007-09-04

2009-11-10

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S413000, C257SE21158

Reexamination Certificate

active

07615807

ABSTRACT:
Provided is an integrated circuit including a transistor with a gate electrode. The gate electrode includes a polysilicon layer in contact with a gate dielectric layer separating the gate electrode and a semiconductor substrate that comprises an active region of the transistor. The gate electrode includes sidewall structures extending along lower portions of opposing sidewalls of the polysilicon layer, the lower portion being oriented to the semiconductor substrate. The gate electrode also includes a barrier layer. A first section of the barrier layer extends along an upper portion of the sidewall of the polysilicon layer, the upper portion being adjacent to the lower portion and facing away from the semiconductor substrate.

REFERENCES:
patent: 5966597 (1999-10-01), Wright
patent: 6198144 (2001-03-01), Pan et al.
patent: 6207543 (2001-03-01), Harvey et al.
patent: 6335254 (2002-01-01), Trivedi
patent: 6383882 (2002-05-01), Lee et al.
patent: 7012000 (2006-03-01), Hong
patent: 2004010507 (2004-01-01), None

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