Field-effect transistor structure in multilevel polycrystalline

Details Field-effect transistor structure in multilevel polycrystalline Field-effect transistor structure in multilevel polycrystalline

1977-05-31

1980-12-16

James, Andrew J.

357 23, 357 59, 357 68, H01L 2348, H01L 2946, H01L 2954

Patent

active

042400970

ABSTRACT:
An ion-implanted lightly-doped polycrystalline silicon strip in an N-channel silicon gate integrated circuit device functions as a resistor element which exhibits transistor action. The impedance of the resistor element changes in response to the voltage on an underlying polycrystalline silicon area which is insulated from the resistor element by a thin silicon oxide layer. This resistor element is used as a load in a static RAM cell array and lowers the power dissipation of the array; the resistance is high for stored zeros and low for stored logic ones.

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