Field effect transistor structure for minimizing parasitic inver

Details Field effect transistor structure for minimizing parasitic inver Field effect transistor structure for minimizing parasitic inver

1974-11-07

1976-03-23

Miller, Jr., Stanley D.

357 52, H01L 2978, H01L 2934

Patent

active

039464199

ABSTRACT:
A field effect transistor with spaced source and drain regions of a first type conductivity in a monocrystalline semiconductor body having a background impurity of a second opposite type conductivity, the improvement being a buried layer of a second type conductivity impurity having an average concentration higher than the impurity concentration of the background impurity that is located just beneath the insulating layer in the field regions of the device and at a greater depth in the gate region, the depth in the gate region being approximately equal to the thickness of the field insulating layer less the thickness of the gate insulating layer.

REFERENCES:
patent: 3867204 (1975-02-01), Rutledge

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