Field effect transistor structure and method of making same

Details Field effect transistor structure and method of making same Field effect transistor structure and method of making same

1975-11-26

1977-09-27

Weiffenbach, Cameron K.

Coating processes

Electrical product produced

Condenser or capacitor

427 85, 427 88, 427 93, 427 94, 427 95, 427261, 427264, 427265, 427248A, 427248B, 204192S, 427248J, B05D 512

Patent

active

040512738

ABSTRACT:
An improved field effect transistor structure which reduces a leakage phenomenon, termed the "sidewalk" effect, between the semiconductor substrate and a conductive silicon dioxide layer disposed over the substrate. The improvement comprises forming a layer of highly resistive silicon dioxide or silicon oxynitride, which is between the conductive oxide and the silicon nitride layer which forms a portion of the gate insulator for the field effect transistor.

REFERENCES:
patent: 3547786 (1970-12-01), Rigo
patent: 3629088 (1971-12-01), Frank et al.
patent: 3658678 (1972-04-01), Gregor et al.
patent: 3793090 (1974-02-01), Barile et al.
patent: 3811076 (1974-05-01), Smith, Jr.
patent: 3841926 (1974-10-01), Garnache et al.

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