Field effect transistor structure and method for making same

Details Field effect transistor structure and method for making same Field effect transistor structure and method for making same

1977-03-24

1977-12-06

Miller, Jr., Stanley D.

357 23, 357 52, 357 53, 357 59, H01L 2934

Patent

active

040620409

ABSTRACT:
An improved field effect transistor structure which reduces a leakage phenomenon, termed the "sidewalk" effect, between the semiconductor substrate and a conductive silicon dioxide layer disposed over the substrate. The improvement comprises forming a layer of highly resistive, silicon dioxide or silicon oxynitride, which is between the conductive oxide and the silicon nitride layer which forms a portion of the gate insulator for the field effect transistor.

REFERENCES:
patent: 3793090 (1974-02-01), Barile et al.
patent: 3841926 (1974-10-01), Garnache et al.
patent: 3913126 (1975-10-01), Hooker et al.

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