Field-effect transistor, sensor using it, and production...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Chemically responsive

Reexamination Certificate

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C438S960000, C257SE21409

Reexamination Certificate

active

07829362

ABSTRACT:
A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

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