Field-effect transistor, semiconductor device, and photo relay

Details Field-effect transistor, semiconductor device, and photo relay Field-effect transistor, semiconductor device, and photo relay

2006-12-05

2006-12-05

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S020000, C257SE29193

Reexamination Certificate

active

07145169

ABSTRACT:
A field-effect transistor includes a silicon layer formed on an insulating film, a first-conductivity-type base and a second-conductivity-type source layers formed in the silicon layer being adjacent to each other, a second-conductivity-type drain layer formed in the silicon layer being separated from the source layer with the base layer being interposed therebetween, a gate-to-drain offset layer formed between the base and drain layers, having a resistance higher than that of the base layer, and a gate electrode formed on at least a surface of the base layer via a gate insulating film wherein the silicon layer in which the base layer is formed is a strained silicon layer.

REFERENCES:
patent: 6933518 (2005-08-01), Braithwaite et al.

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