Field effect transistor on a support having a wide forbidden ban

Details Field effect transistor on a support having a wide forbidden ban Field effect transistor on a support having a wide forbidden ban

1978-04-04

1979-11-06

Edlow, Martin H.

357 16, 357 15, 357 61, H01L 2980

Patent

active

041737644

ABSTRACT:
A field effect transistor deposited upon a substrate having a wide forbidden band comprises an active layer of n-type conductivity which forms a heterojunction with the substrate. Since the subjacent material has a forbidden band higher than the forbidden band of the active layer, the formation of electronic currents between the source and the drain and in the substrate is avoided.

REFERENCES:
patent: 3217214 (1965-11-01), Tummers
patent: 3273030 (1966-09-01), Balk
patent: 3767984 (1973-10-01), Shinoda
patent: 4075651 (1978-02-01), James
patent: 4075652 (1978-02-01), Umebachi

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