Field effect transistor microwave amplifier

Details Field effect transistor microwave amplifier Field effect transistor microwave amplifier

1982-08-20

1985-02-19

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including gain control means

330277, H03G 310, H03F 316

Patent

active

045008485

ABSTRACT:
In a microwave preamplifier of a Doppler radar system used for Earth observation, three pre-matched and self-biassed field effect microwave transistors are provided. By supplying these transistors by means of a voltage regulator, whose output voltage varies under the action of a control circuit, the gain of this pre-amplifier may be varied without modifying the standing wave ratio, thereby obtaining modulation of the microwave signal amplified by the amplifier. Thus, additional modulation may be obtained, speech modulation for example, on the transmission signal of an Earth observation Doppler radar system.

REFERENCES:
patent: 3714601 (1973-01-01), Minton et al.
patent: 4229707 (1980-10-01), Suganuma
patent: 4338572 (1982-07-01), Schurmann
patent: 4366450 (1982-12-01), Suganuma

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