Field effect transistor loaded with multiquantum barrier

Details Field effect transistor loaded with multiquantum barrier Field effect transistor loaded with multiquantum barrier

1997-06-27

1999-08-03

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 14, 257194, H01L 2906

Patent

active

059328908

ABSTRACT:
A field effect transistor having an excellent transfer conductance and an improved gate leakage current and breakdown voltage is provided. In the transistor, a multiquantum barrier structure 4 is arranged between a gate and a channel layer 3 along a channel layer 3 and having an effect of reflecting incident overflowing carriers a s waves in with with phase conditions of total reflection allowing mutual enhancement of the incident and reflected wave in a region between a channel layer 3 and a gate electrode 10 and/or in a region opposite to the gate electrode 10 relative to the channel layer 3.

REFERENCES:
patent: 5192987 (1993-03-01), Khan et al.

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