Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Ballistic transport device
Reexamination Certificate
2007-03-20
2010-06-01
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Ballistic transport device
C257S020000, C257S027000, C257S063000
Reexamination Certificate
active
07728324
ABSTRACT:
A field effect transistor of an embodiment of the present invention includes, a semiconductor substrate containing Si atoms; a protruding structure formed on the semiconductor substrate; a channel region formed in the protruding structure and containing Ge atoms; an under channel region formed under the channel region in the protruding structure and containing Si and Ge atoms, the Ge composition ratio among Si and Ge atoms contained in the under channel region continuously changing from the channel region side to the semiconductor substrate side; a gate insulating film formed on the channel region; and a gate electrode formed on the gate insulating film on the channel region.
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Liow et al., “Investigation of silicon-germanium fins fabricated using germanium condensation on vertical compliant structures,” Applied Physics Letters (2005), 87:262104-1-262104-3.
Irisawa Toshifumi
Tezuka Tsutomu
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Pham Long
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