Field effect transistor including .pi.conjugate polymer and liqu

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

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257 72, H01L 3524

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active

058922440

ABSTRACT:
The present invention relates to a field effect transistor (FET element) in which a .pi.-conjugated polymer film serving as a semiconductor layer is manufactured by first forming a .pi.-conjugated polymer precursor film using a .pi.-conjugated precursor which is soluble in a solvent and then changing the precursor polymer film to the .pi.-conjugated polymer film. A liquid crystal display apparatus uses the FET element as an active drive element. A large number of the FET elements can be manufactured on a large area substrate at the same time at lost cost and operate stably. A large current flow between the source and drain can be significantly modulated by a voltage applied to the gate of the FET element.

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