Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1996-03-26
1998-10-06
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257280, H01L 2980, H01L 31112
Patent
active
058180770
ABSTRACT:
The field effect transistor includes (a) a plurality of drain finger electrodes, source finger electrodes and gate finger electrodes disposed in an active region on a semiconductor substrate so that each of the gate finger electrodes is sandwiched between each of the drain and source finger electrodes, (b) a source electrode pad for electrically connecting the source finger electrodes to each other, and (c) a gate electrode pad for electrically connecting the gate finger electrodes to each other, the gate electrode pad being disposed farther away from the active region than the source electrode pad. By disposing the gate electrode pad farther away from the active region than the source electrode pad, it is possible to arrange the source electrode pads at higher density, which is accompanied by a lesser number of source finger electrodes associated with each of the source electrode pads. Thus, it is possible to decrease source inductance, and avoid parasitic oscillation.
REFERENCES:
patent: 5283452 (1994-02-01), Shih et al.
Katano Fumiaki
Morikawa Junko
Takahashi Hidemasa
Loke Steven H.
NEC Corporation
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