Field effect transistor having unsaturated characteristics

Details Field effect transistor having unsaturated characteristics Field effect transistor having unsaturated characteristics

1977-05-27

1978-08-08

Wojciechowicz, Edward J.

357 55, 357 56, H01L 2978

Patent

active

041060440

ABSTRACT:
A field effect transistor having unsaturated characteristics comprising a plurality of current channels consisting of a semiconductor material of an impurity concentration between 1 .times. 10.sup.13 to 1 .times. 10.sup.15 atoms/c.c., each current channel having a minimum diameter between 2 and 15 .mu.m so that the depletion layer growing from the gate junction nearly but not perfectly closes the current channel at zero gate bias. This junction type field effect transistor provides unsaturated and well aligned parallel characteristic curves and reduces power loss as compared to conventional unsaturated type vertical field effect transistors.

REFERENCES:
patent: 3328213 (1967-06-01), Topas et al.
patent: 3381188 (1968-04-01), Zuleeg et al.
patent: 3497777 (1970-02-01), Teszner
patent: 3675313 (1972-07-01), Driver et al.
patent: 3767982 (1973-10-01), Teszner et al.
patent: 3828230 (1974-08-01), Nishizawa et al.
IBM Tech. Bul., vol. 13, No. 6, Nov. 1970, Jadus.
"Neus Aus der Technik".
Solid State Electronics, 1967, vol. 10, pp. 559-576.

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