Field effect transistor having thick source and drain regions

Details Field effect transistor having thick source and drain regions Field effect transistor having thick source and drain regions

1995-03-30

1998-04-07

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 72, 257347, 257390, H01L 2976

Patent

active

057367515

ABSTRACT:
Thin film transistor including polycrystalline silicon or amorphous silicon thin film channel regions having a thickness of between about 100 .ANG. and 2500 .ANG. which are thinner than at least a portion of the source and drain regions and active matrix assemblies including thin film transistors for improved electro-optical displays are provided.

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