Field effect transistor having source and/or drain forming...

Details Field effect transistor having source and/or drain forming... Field effect transistor having source and/or drain forming...

2007-11-13

2007-11-13

Sarkar, Asok Kumar (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE29271, C257SE21425

Reexamination Certificate

active

10893190

ABSTRACT:
The present invention is a field effect transistor having a strained semiconductor substrate and Schottky-barrier source and drain electrodes, and a method for making the transistor. The bulk charge carrier transport characteristic of the Schottky barrier field effect transistor minimizes carrier surface scattering, which enables the strained substrate to provide improved power and speed performance characteristics in this device, as compared to conventional devices.

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Magnusson, U. et al. “Bulk Silicon Technology For Complementary MESFETs.”Electronics Letters, vol. 25, No. 9, Apr. 27, 1989: pp. 565-566.

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