Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-05-10
2011-05-10
Sarkar, Asok K (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S019000, C257S616000, C257SE29193, C257SE29271, C257SE21425
Reexamination Certificate
active
07939902
ABSTRACT:
The present invention is a field effect transistor having a strained semiconductor substrate and Schottky-barrier source and drain electrodes, and a method for making the transistor. The bulk charge carrier transport characteristic of the Schottky barrier field effect transistor minimizes carrier surface scattering, which enables the strained substrate to provide improved power and speed performance characteristics in this device, as compared to conventional devices.
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Larson John M.
Snyder John P.
Avolare 2, LLC
King David J.
Lemaire Charles A.
Lemaire Patent Law Firm, P.L.L.C.
Sarkar Asok K
LandOfFree
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