Field effect transistor having source and gate electrodes on opp

Details Field effect transistor having source and gate electrodes on opp Field effect transistor having source and gate electrodes on opp

1977-02-14

1979-02-20

Wojciechowicz, Edward J.

357 4, 357 23, 357 52, 357 55, 357 81, H01L 2980

Patent

active

041410211

ABSTRACT:
By positioning the source and gate electrodes on the opposite faces of the active layer, these electrodes can be brought closer together and may have their adjacent edges mutually aligned or even overlapping. The series source resistance and channel resistance can be greatly reduced, because of this closer spacing, which can not be attained when the electrodes are coplanar. By also locating the drain electrode on the same side of the active layer as the source, the source-to-drain spacing can be significantly reduced, reducing channel length and improving the high frequency performance of the transistor. Further, because the electrodes are located on both sides of the active layer, it is possible to provide a large area contact on the bottom, or substrate, side of the epitaxial wafer structure which can advantageously be used to provide a low thermal and electrical resistance connection for the source contact, for example. Finally, the fact that one or more of the electrodes can be contacted from the bottom of the wafer makes possible the simple parallel interconnection of electrodes to easily form multiple element power transistors.

REFERENCES:
patent: 3813585 (1974-05-01), Tarui et al.
patent: 3818426 (1974-06-01), Bonnet et al.
patent: 3986196 (1976-10-01), Decker
patent: 4015278 (1977-03-01), Fukuta

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